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Title:
 
Polarization Effects and Tests for Crystalline Silicon Cells
 
Abstract/Summary:
 
Polarization or the potential induced degradation effect (PID) on crystalline silicon moduls is an alarming failure mode on modern crystalline silicon cells meeting high system voltages [1-4]. It can cause power losses in the vicinity 30% and more. Known parameters for PID on the cell level are high electrical resistivity of the SiNx antireflective coating via low refractive index and increased thickness and low emitter depth. In this work we investigate the Polarization effect in regards to degradation speed on different encapsulants and module designs and with a special focus on selective emitter cells. The aim is a better understanding of the effect to propose appropriate test procedures for crystalline silicon cells and modules. For this purpose, different cells and modules have undergone various test sequences comparing different module materials and components.
 
 
Author(s):
 
S. Koch, C. Seidel, P. Grunow, S. Krauter, M. Schoppa
 
Keywords:
 
Selective Emitter, Polarization, PID, Crystalline Silicon Cell
 
Topic:
 
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cell Improvements
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BV.3.46
 
Pages:
 
1726 - 1731
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-2BV.3.46
 
Price:
 
 
0,00 EUR
 
Document(s): paper