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Plasma Texturing and its Influence on Surface Passivation
D. Groetschel, J. Junge, M. Kaes, A. Zuschlag, G. Hahn
Passivation, Plasma Etching, Texturisation, Texturization
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Cells and Materials, Processing Technology of
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 2CV.4.62
1534 - 1536
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-2CV.4.62
0,00 EUR
Document(s): paper


In this paper a proof of concept of a plasma texture developed for solar cell processing is presented. Currently the implementation of this step into standard cell processes is limited by the uniformity of the etching results. It was, however, successfully introduced into a photolithography based process for 2x2 cm²-cells, leading to a benefit in efficiency of up to 1%abs compared to untextured samples. The combination with emitter passivation by thermal oxide on the front side – both steps apart from each other leading to an improvement of cell data – shows a degradation of the effective diffusion length. This detrimental effect is assigned to defects generated at high oxidation or firing temperatures and demands further investigation and adjustment of the processing steps.