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Title:
 
GaTlP – a Novel Semiconductor for Thermophotovoltaic Applications
 
Author(s):
 
A. Zayan, C. Downs, T.E. Vandervelde
 
Keywords:
 
Thermophotovoltaics, electronic properties, band structure, optical bandgap
 
Topic:
 
NEW MATERIALS AND CONCEPTS FOR SOLAR CELLS AND MODULES
Subtopic: New Materials and Concepts for Cells
Event: 29th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.7.37
 
Pages:
 
280 - 283
ISBN: 3-936338-34-5
Paper DOI: 10.4229/EUPVSEC20142014-1BV.7.37
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Thermophotovoltaics has recently garnered significant interest in the field of renewable energy. This is due to their versatility and promise to achieve efficiencies well beyond the Shockeley-Queisser Limit that dictates the performance of photovoltaics [1,2]. Thermophotovoltaics generate electricity from heat converted into infrared photons. In this study, we focus our attention to Ga1-xTlxP, a tertiary compound with the potential of having a lower bandgap with increasing Thallium (Tl) content. TlP belongs to a group of materials known as semi-metals and possesses an optical bandgap below zero [3]: This implies that the material bandgap can theoretically change from 2.26 eV (x=0) to -0.27 eV (x=1). Presented in this study are the implications such a band structure change could have on the associated properties such as the optical bandgap and lattice constant of GaTlP with varying Tl content. The versatility in Tl content allows for a number of candidate substrates including GaAs, Ge, and InP.