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Title:
 
Advancing Long Wavelength Thermophotovoltaic Diodes
 
Author(s):
 
A.S. Licht, K. Levinson, A. Zayan, D. DeMeo, T. Vandervelde
 
Keywords:
 
Thermophotovoltaics, III-V Semiconductors, Ternary, Quaternary
 
Topic:
 
NEW MATERIALS AND CONCEPTS FOR SOLAR CELLS AND MODULES
Subtopic: New Materials and Concepts for Cells
Event: 29th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.7.64
 
Pages:
 
338 - 343
ISBN: 3-936338-34-5
Paper DOI: 10.4229/EUPVSEC20142014-1BV.7.64
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


The conventional thermophotovoltaic diode material is gallium antimonide (GaSb). However, with a cut-off wavelength of 1.73μm, GaSb is optimized for high temperature sources (>1400°C). For lower temperature applications, TPV diodes with longer cut-off wavelengths are required for optimal conversion of the spectrum. Development of these longer wavelength diodes will enable TPV to harvest previously untapped sources of energy. Bulk III-V, ternary and quaternary, compounds, such as InGaAs and InGaAsSb, have much longer cut-off wavelengths than GaSb and have been explored extensively. This paper reviews the III-V materials that have been studied for TPV and discusses alternative ideas for extending the diodes to even longer wavelengths. This includes the addition of heavier III-V elements, such as thallium and bismuth, which have yet to be fabricated for TPV. In addition to new materials, new structures may also extend TPV to longer wavelengths. We discuss the incorporation of a superlattice structure, which is composed of alternating thin layers of material in which the bandgap is determined by varying the thickness and periodicity of the constituent layers. Superlattice structures allow for flexibility in band engineering and reduced Auger recombination rates. The most recent progress on these materials is presented here.