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Title:
 
Predicting Voc at Ultra-High Solar Concentration Using Computational Numerical Analysis
 
Author(s):
 
M. Stevens, C. Downs, D. Emerson, J. Adler, S. Maclachlan, T.E. Vandervelde
 
Keywords:
 
Numerical Simulation, Concentrator Cells, III-V Semiconductors, Modeling
 
Topic:
 
SOLAR CELLS / ASSEMBLIES / MODULES FOR TERRESTRIAL CONCENTRATOR SYSTEMS AND FOR SPACE SOLAR GENERATORS
Subtopic: III-V-based Multi-junction Solar Cells, Concentrator Solar Cells and Space Solar Cells
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 4CV.3.19
 
Pages:
 
1474 - 1477
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-4CV.3.19
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Under ultra-high solar concentration, drastic efficiency drops are attributed to a deteriorating fill factor and additional thermal effects. The effects of ultra-high solar concentration on other fundamental electrical properties, such as open-circuit voltage, have yet to be explored in detail. In this work, we discuss our theoretical examination of semiconductor performance under ultra-high irradiance. Using advanced numerical analysis techniques and the finite-element library deal.II, we develop a computational model to simultaneously solve the carrier continuity equations and Poisson’s equation for optically generated charge carriers and the resulting electric potential as functions of space and time. We use this model to analyze VOC in both dynamic and quasi-steady state conditions. Ultimately, we characterize the relationship between VOC and increasing solar concentration.