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A Simulation Study of Depletion Effect of Negatively Charged Passivation Layer on n-Type Back-Contact Back-Junction Silicon Solar Cell
C.-M. Wei, C.-C. Li, C.-C. Chuang
Back Contact, Passivation, Simulation, Solar Cell, Silicon
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cell Characterisation and Modelling
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BV.7.3
871 - 873
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-2BV.7.3
0,00 EUR
Document(s): paper


In this study, the effect of fixed charges contained in the passivation films that are applied to the gap region of back-contact back-junction (BCBJ) solar cells has been demonstrated by numerical device simulation. Usually, the BCBJ solar cells are fabricated with n-type Si wafers. It is found that the negatively charged passivation film results in an additional depletion region near the surface of the gap region of the BCBJ solar cell while the positively charged passivation film does not. This additional depletion region would also lead to a larger carrier generation rate under reverse bias, which might in turn which might in turn makes larger the current under reverse bias and smaller the shunt resistance. Based on the observed results, experiments can be planned to effectively improve the cell performance with reduced RSHUNT by optimizing the charge state of the passivation film.