login

Search documents

Browse topics

Document details

 
Title:
 
A Simplified Model to Simulate Passivating & Selective Hole-Collecting Contacts
 
Author(s):
 
G.J.M. Janssen, M.T.S.K. Ah Sen, P.C.P. Bronsveld
 
Keywords:
 
Contact, Passivation, Simulation, Silicon (Si) Solar Cells, Carrier Selectivity
 
Topic:
 
Silicon Materials and Cells
Subtopic: Characterisation & Simulation of Si Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DO.6.3
 
Pages:
 
280 - 285
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2DO.6.3
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


A simplified model is presented that can be used in simulations to describe a wide range of passivating & selective contacts with different interfacial layers, such as a tunneling oxide, an intrinsic a-Si layer or an oxide with a high pinhole density. The interfacial layer is described by a c-Si(i) layer with a low, effective charge carrier mobility. We present simulations using this model that show that a work function above 5.2 eV can be sufficient to make a good hole selective contact on Si. However, the lower the work function, the more care must be taken to optimize the interfacial layer to find a good balance between electron and hole transport.