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Analysis of the Impact of Crucible Properties on Thermally Induced Stresses in Directionally Solidified Multi-Crystalline Silicon Ingots
M.P. Bellmann, M. M'Hamdi, K. Ellingsen, A. Solheim, H. Sørheim, L. Arnberg
Modelling / Modeling, Multicrystalline-Silicon, Directional Crystallisation
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2CV.1.28
1244 - 1247
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2CV.1.28
0,00 EUR
Document(s): paper


In contrast to standard quartz crucibles, which can only be used once, crucibles made of silicon nitride have the potential of being used several times when multi-crystalline silicon ingot are solidified directionally. In a previous study [1], it was shown that crucible thermal properties have a significant impact on the heat transfer conditions during silicon solidification in a small scale furnace. The aim of the present work is to analyse the effect of the crucible material type on thermally induced stresses and deformations in the ingot and associated material quality. Transient thermal fields calculated using a global furnace model [2], are used in subsequent mechanical calculations on the silicon ingot. The stress-strain fields in the ingot are calculated using an elastic formation as well as including viscoplasticity. Results obtained using silica and silicon nitrides are compared.