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Application of (Delta)n Normalised Time, (Gamma): Linear Injection-Level Dependence on LeTID and the Recovery in Crystalline Silicon
M. Kim, A. Ciesla, C. Sun, D. Chen, M. Abbott, B. Hallam
Defects, Degradation, Silicon Solar Cell(s), Multicrystalline Silicon, LID, LeTID
Silicon Materials and Cells
Subtopic: Feedstock, Crystallisation, Wafering, Defect Engineering
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DO.10.4
191 - 193
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2DO.10.4
0,00 EUR
Document(s): paper, presentation


The impact of the injection-level ((Delta)n) on the kinetics of light- and elevated temperature-induced degradation (LeTID) is investigated. Higher illumination intensities (I) are known to increase the LeTID and recovery rates. In this work, the (Delta)n normalisation approach is demonstrated. A similar time scale is observed after normalisation to the (Delta)n at the given I to time. The evidence suggests the recovery rate of LeTID is linearly proportional to (Delta)n and can potentially be used to predict long-term degradation, which can incorporate operating conditions and insolation level, based on an accelerated degradation testing using (Delta)n dependence. The experiment results demonstrated the difference in LeTID and the recovery trends and the overall rates. The variation of (Delta)n during the cycle leads to a slow rate during the degradation since both (Delta)n and the amount of available defect precursors are reduced. However, during the recovery, the (Delta)n is being recovered as the defect states are reduced, which appears to show compressed exponential recovery. The normalisation approach demonstrated here showed very close agreement among the results with different illumination intensities. The implication eliminated both influences due to variation of (Delta)n and the acceleration of the rate due to high n or illumination intensity.