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Boron Concentration Measurements at the I/P Interface in Nip a-Si Solar Cells
B.B. Van Aken, M. Duchamp, C.B. Boothroyd, R.E. Dunin-Borkowski, J.-P. Barnes, M. Veillerot, W.J. Soppe
TEM, Thin Film Solar Cell, Amorphous and Microcrystalline Silicon, Boron Concentration using Core-Loss EELS, Bulk Plasmon Energy using EELS
Thin Film Solar Cells
Subtopic: Amorphous and Microcrystalline Silicon Solar Cells
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3AV.2.11
2637 - 2640
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-3AV.2.11
0,00 EUR
Document(s): paper


The p-type Si layer in n-i-p a-Si and μc-Si solar cells on foil has several important requirements with respect to conductivity and optical transmission. We control the optical band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flows in the process chamber. Modelling shows that the optimum efficiency in n-i-p solar cells is obtained when the p-a-SiC band gap is just above the band gap of the absorber layer. We have assessed the potential of core-loss electron energy-loss spectroscopy (EELS) for detecting B and C and of low-loss EELS, in a spatially resolved manner, as probe of local variations in bulk plasmon energy. EELS in the transmission electron microscope (TEM) combines the necessary spatial resolution to investigate the boundary between p-a-SiC and i-a-Si with sufficient sensitivity to the boron content.