login

Search documents

Browse topics

Document details

 
Title:
 
Beneficial Effects of Dopant Compensation on Carrier Lifetime in Upgraded Metallurgical Silicon
 
Author(s):
 
S. Dubois, N. Enjalbert, F. Servant, J.P. Garandet, R. Monna, J. Kraiem
 
Topic:
 
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Cells and Materials, Processing Technology of
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 2CV.4.36
 
Pages:
 
1445 - 1448
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-2CV.4.36
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


This study is devoted to the variations of the carrier lifetime and minority carrier diffusion length with the compensation level in solar-grade crystalline silicon. Especially we show, by using the Shockley-Read-Hall statistics, that an increase in the compensation level reduces the recombination strength of doping species and of some metal impurities. These theoretical results are confirmed by the chemical and electrical characterizations of strongly compensated multicrystalline silicon wafers and solar cells, from silicon purified by the metallurgical route. These results are of paramount importance since an accurate control of the compensation level can lead to strong improvements in silicon solar cells efficiencies. Nevertheless, possible limits of too high compensation levels are also evoked.