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Title:
 
Bifacial Cz-Silicon Solar Cells Passivated With Silicon Nitride
 
Author(s):
 
L. Janßen, H. Windgassen, D.L. Bätzner, B. Bitnar, H. Neuhaus, H. Kurz
 
Keywords:
 
Passivation, PECVD, Silicon Nitride
 
Topic:
 
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Cells and Materials, Processing Technology of
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 2CV.4.60
 
Pages:
 
1527 - 1529
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-2CV.4.60
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Bifacial silicon solar cells with silicon nitride passivation are investigated with respect to the influence of the used base resistivity of the Czochralski silicon. In this paper will be shown that no effective back surface field is formed in a firing through approach and that this will limit the open circuit voltage. The open circuit voltage of these solar cells is determined by the built-in potential between the emitter and the base. The passivation quality of the silicon nitride on the rear side is superior to the aluminum back surface field, so that a gain in short circuit current can be observed for the lower base resistivity of the silicon and a maintaining of the short circuit current for the high base resistivity investigated here. Additionally the benefits of bifacial solar cell design are simulated with PC1D.