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Back-Contact Behaviour for Electrodeposited CdTe Solar Cells
S. Oktik, M.E. Ozsan
Back Contact, CdS/CdTe Solar Cells
Thin Films Solar Cells
Subtopic: CdTe Solar Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 3BV.5.89
3084 - 3086
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-3BV.5.89
0,00 EUR
Document(s): paper


CdTe/CdS based solar cells are a leading candidate for multi-gigawatt annual production. However fundamental issues such as back-contact stability, control of uniformity over large areas, reduced absorber layer thickness (≤1μm), higher module efficiency, and standardization of equipment for deposition of the CdTe layer are still serious aspects in the fabrication of high performance, low cost, large area stable CdTe based solar cells. This paper aims to contribute the back contact issues by detailed device measurements for CdTe/CdS based solar cells fabricated using electrodeposited CdTe thin film photovoltaic technology. The transition temperature from the conducting to the rectifying state for the quasi- ohmic back contact is found to be strongly correlated to the surface etches before back contact metallization. The effects of the second junction to open circuit voltage and the short circuit current of devices are reported.