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Boron-Oxygen Defects in Compensated p-Type Czochralski Silicon
D. Macdonald, A. Liu, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, L.J. Geerligs
Defects, Recombination, Czochralski Silicon
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2BP.1.5
877 - 882
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2BP.1.5
0,00 EUR
Document(s): paper


The extent of formation of the well-known boron-oxygen defect has been measured in deliberately compensated p-type Czochralski silicon. Both the defect concentration and the defect formation rate confirm recent results showing that the amount of boron-oxygen defects formed is determined by the net doping p0=NA-ND, rather than the total boron concentration NA. The presence of boron-phosphorus pairs has been postulated previously as a possible explanation for this effect. However, we find that the existence of such pairs is not consistent with measurements of the majority carrier mobility, and the crossover point of interstitial iron/iron-boron pairs in compensated silicon. However, whatever the cause of the reduced impact of oxygen-boron defects in compensated silicon, the implications for solar cells made with compensated feedstock are positive.