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Title:
 
Boosting Mobility in Highly Doped Zinc Oxide Films by Post Deposition Thermal Treatment
 
Author(s):
 
F. Ruske, M. Roczen, J. Hüpkes, S. Gall, B. Rech
 
Keywords:
 
Annealing, Electrical Properties, TCO, Zinc Oxide
 
Topic:
 
Thin Films Solar Cells
Subtopic: Thin Film Crystalline Silicon Solar Cells and Wafer Equivalents
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 3CO.6.6
 
Pages:
 
2353 - 2356
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-3CO.6.6
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Aluminum-doped zinc oxide are a representative for a transparent and conducting oxide thin film (TCO) and is commonly used as front contact in chalcopyrite and amorphous/microcrystalline silicon solar cells. Optimum optical and electrical properties for this application are obtained for moderate doping levels and high mobilities. State-of-the-art films, preferably deposited by magnetron sputtering or low pressure chemical vapor deposition, exhibit mobilities around 40 cm2/Vs. Post-deposition thermal treatment will usually lead to a strong increase of resistivity. If the films are capped by thin silicon layers, however, the degradation of electrical properties can be prevented and a significant increase in mobility can be obtained. The highest mobility reached in this study is 67 cm2/Vs.