login

Search documents

Browse topics

Document details

 
Title:
 
Bifacial c-Si Solar Cells with Transparent Electrodes and Gridlines of Wire
 
Author(s):
 
G. Untila, T. Kost, A. Chebotareva, M. Zaks, A. Sitnikov, O. Solodukha
 
Keywords:
 
Bifacial, Heterojunction, Transparent Conducting Oxides (TCO), Silicon Solar Cell(s)
 
Topic:
 
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2CV.2.80
 
Pages:
 
1698 - 1701
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2CV.2.80
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Transparent electrodes of Fluorine doped Indium Oxide (IFO), Tin doped Indium Oxide (ITO), Indium doped Zinc Oxide (IZO) and Antimony doped Tin Oxide (ATO) films were deposited by pyrosol method on (pp+)Cz- Si structure. Bifacial IFO/(pp+)Cz-Si/IZO, IFO/(pp+) Cz-Si/ITO, IFO/(pp+)Cz-Si/ATO as well as monofacial IFO/(pp+)Cz-Si/InGa heterojunction solar cells were prepared using current collecting grid made of wire according to Laminated Grid Cell (LGCell) design. Monofacial LGCell showed the efficiency of 17.8%, as well as the front/rear efficiency of 17.2%/12.1% was obtained for bifacial IFO/(pp+)Cz-Si/IZO LGCell. Among the examined IZO, ITO and ATO films deposited by pyrosol method, the IZO film is superior as a rear transparent electrode to the boron doped p+-Si layer in bifacial solar cells made of p-type crystalline silicon, due to, first of all, the superior passivation of the rear p+-Si layer. The ATO film demonstrated the worst passivation as well as a high resistance of the ATO/p+- Si contact.