login

Search documents

Browse topics

Document details

 
Title:
 
Can Heterojunction III-V Cells Outperform the Homojunction GaAs Cell?
 
Author(s):
 
Y.-Y. Hu, G.J. Bauhuis, P. Mulder, H. Cheun, W. Yoon, H.M. Lee, J.J. Schermer
 
Keywords:
 
Doping, Heterojunction, Recombination, High Efficiency, III-V Semiconductors
 
Topic:
 
SOLAR CELLS / ASSEMBLIES / MODULES FOR TERRESTRIAL CONCENTRATOR SYSTEMS AND FOR SPACE SOLAR GENERATORS
Subtopic: III-V-based Multi-junction Solar Cells, Concentrator Solar Cells and Space Solar Cells
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 4CV.3.17
 
Pages:
 
1466 - 1469
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-4CV.3.17
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


III-V heterojunction and homojunction structures grown on GaAs substrates were investigated to obtain maximum efficiency for single junction solar cells. For this purpose, AlxGa1-xAs/GaAs and AlyGa1-yInP/GaAs cell structures with various emitter compositions and layer thicknesses were developed and studied in detail. A standard GaAs homojunction cell was used as a benchmark to which the performances of the heterojunction cells were examined. Although none of the tested heterojunction cells performs better than the homojunction cell in this development stage, the Al0.2Ga0.8As heterojunction cell has shown a promising potential to achieve a higher efficiency.