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Title:
 
Characterization of Fire-Through Pastes on LPCVD Based Passivating Contacts in MonoPolyTM Solar Cells
 
Author(s):
 
P. Padhamnath, J.K. Buatis, N. Nandakumar, N. Nampalli, N. Balaji, V. Shanmugam, A.G. Aberle, S. Duttagupta
 
Keywords:
 
Passivation, Recombination, Screen Printing, Passivating Contact, Metallization
 
Topic:
 
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2EO.1.5
 
Pages:
 
309 - 313
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2EO.1.5
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


In this work we have characterized screen-printed passivating contacts formed by different commercially available fire-through pastes on phosphorus doped (n+) polysilicon (poly-Si) layers at the rear side of monoPolyTM solar cells. Extremely low recombination current density under metal contacts (J01,metal) of 35-45 fA/cm2 and excellent contact resistivity (c) values of ~1.3 mΩ-cm2 are obtained for two different thicknesses of poly-Si (150 nm and 250 nm) used in this work. We observe although the metal induced recombination increases with reducing thickness of the poly-Si layer, thinner poly-Si layers can lead to higher efficiencies on account of reduced parasitic absorption leading to higher short-circuit current. A champion efficiency of 22.6% having 5 busbars is reported for monoPolyTM cells with the best performing FT paste on large area (244.3 cm2) commercially available Czochralski grown Si wafers.