Title:	Co-Plated Bifacial n-PERT Cells with 2-Sided Polysilicon Passivating Contacts
Author(s):	S. Singh, P. Choulat, F. Duerinckx, M. Recamán Payo, R.C.G. Naber, M. Lenes, L. Tous, J. Poortmans
Topic:	Silicon Materials and Cells
Subtopic:	High Temperature Route for Si Cells
Event:	37th European Photovoltaic Solar Energy Conference and Exhibition
Session:	2BO.2.4
ISBN:	3-936338-73-6
Price:	0,00 EUR
Document(s):	presentation

Abstract/Summary:

---

In this work we developed the building blocks for the integration of polysilicon-based passivating contacts in plated bifacial n-type PERT (Passivated Emitter and Rear Totally diffused) solar cells. We show the viability of n-PERT cells using 2- side passivating contacts with 2-side plated nickel/silver metallization. Both p-type and n-type polysilicon layers (called n-poly and p-poly hereafter) were obtained from a single step, intrinsic LPCVD deposited poly-Si on both sides of the solar cell. To achieve p-poly, an auto-doping process is presented, where a boron emitter is used as doping source for boron. Sintering of i-poly with a BBr3 emitter underneath is applied in a POCl3 diffusion furnace which also results in creating npoly at the rear. State of the art J0 values were observed for both n-poly and auto doped p-poly. We also show the viability of a laser oxidation process instead of a masking and etch approach for patterning the front side p-poly. Finally, we demonstrate very low damage laser ablation and nickel/silver plating as metallization scheme.