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Co-Plated Bifacial n-PERT Cells with 2-Sided Polysilicon Passivating Contacts
S. Singh, P. Choulat, F. Duerinckx, M. Recamán Payo, R.C.G. Naber, M. Lenes, L. Tous, J. Poortmans
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BO.2.4
ISBN: 3-936338-73-6
0,00 EUR
Document(s): presentation


In this work we developed the building blocks for the integration of polysilicon-based passivating contacts in plated bifacial n-type PERT (Passivated Emitter and Rear Totally diffused) solar cells. We show the viability of n-PERT cells using 2- side passivating contacts with 2-side plated nickel/silver metallization. Both p-type and n-type polysilicon layers (called n-poly and p-poly hereafter) were obtained from a single step, intrinsic LPCVD deposited poly-Si on both sides of the solar cell. To achieve p-poly, an auto-doping process is presented, where a boron emitter is used as doping source for boron. Sintering of i-poly with a BBr3 emitter underneath is applied in a POCl3 diffusion furnace which also results in creating npoly at the rear. State of the art J0 values were observed for both n-poly and auto doped p-poly. We also show the viability of a laser oxidation process instead of a masking and etch approach for patterning the front side p-poly. Finally, we demonstrate very low damage laser ablation and nickel/silver plating as metallization scheme.