Title: |
Comparison of the Oxygen Concentration in Czochralski Silicon Crystal Obtained by a Simple Lumped-Parameter Model and Sophisticated 2D-3D Simulations |
Author(s): |
J. Friedrich, M. Trempa, H. Koch, F. Mosel, A. Mühe |
Keywords: |
Czochralski (Cz), Crystal Growth, Silicon, Convection, Computer Simulation |
Topic: |
Silicon Materials and Cells |
Subtopic: | Feedstock, Crystallisation, Wafering, Defect Engineering |
Event: | 38th European Photovoltaic Solar Energy Conference and Exhibition |
Session: | 2DV.4.4 |
Pages: |
347 - 351 |
ISBN: | 3-936338-78-7 |
Paper DOI: | 10.4229/EUPVSEC20212021-2DV.4.4 |
Price: |
0,00 EUR |
Document(s): |
paper, poster |