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Comparison of Electrical Performances of Fully Ion Implanted n-PERT Solar Cells Made of Different n-Type Wafer Feedstocks
G. Bektaşs, H. Asav, H.H. Canar, O. Aydin, A.E. Keçeci, S. Ozdemir, S. Koçak Bütüner, S. Seyrek, F. Es, R. Turan
Feedstock, Boron, Wafer, Ion Implantation, n-PERT, Phosphorous
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.1.35
281 - 282
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CV.1.35
0,00 EUR
Document(s): paper, poster


This work compares the electrical performances of fully ion-implanted bifacial PERT solar cells made of n-type wafers from Kalyon PV and Longi Solar. The cell performances are presented with comparative emitter and BSF characterization results. The highest front photo-conversion efficiencies are measured as 19.3% and 19.2% with bifaciality factors (rear/front) of 86.8% and 85.1% for the solar cells made of Longi and Kalyon wafers, respectively. The Voc values of the solar cells and iVoc values of the symmetrical emitter and BSF samples fabricated on n-Si wafers from the two companies are almost equal, implying similar wafer qualities from the device point of view.