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Development of Tool for Fast Quantitative Characterization of Dislocation Density on Etched Wafers
G. Stokkan, J.-K. Malmhaug, A.E. Hansen, K. Haukalid, M. Solem, S. Westerberg, P. Hveem, M. Juel, B. Sægrov-Sorte
Dislocation Density, Characterisation, Characterization, Twins
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cell Characterization and Modelling
Event: 27th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2AV.6.41
1307 - 1311
ISBN: 3-936338-28-0
Paper DOI: 10.4229/27thEUPVSEC2012-2AV.6.41
0,00 EUR
Document(s): paper


Dislocations are viewed as the most detrimental defect in terms of efficiency reduction for multicrystalline and quasi-monocrystalline silicon, and measuring the dislocation density quantitatively is crucial for understanding the generation processes and optimizing the production environment. A scanning instrument was built which records the reflection pattern from a polished and etched surface and analyzes the obtained images. It is possible to distinguish the pattern resulting from scattering by twins/grain boundaries and obtain measurements which only includes signal from dislocation etch pits. The resulting intensity plot can be calibrated against manual counting of etch pits, and a simple linear calibration factor is sufficient to obtain quantitative measurements of dislocation density over entire wafer areas.