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Design of Submicrometer Hole Structure for Absorption Enhancement in Thin Film Crystalline Si Solar Cells
C.I. Yeo, S.J. Jang, J.H. Kwon, Y.T. Lee
Thin Film Solar Cell, Absorption, Anti-Reflection, Design
Thin Film Solar Cells
Subtopic: Thin Film Crystalline Silicon Solar Cells
Event: 27th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CV.2.21
2425 - 2427
ISBN: 3-936338-28-0
Paper DOI: 10.4229/27thEUPVSEC2012-3CV.2.21
0,00 EUR
Document(s): paper


We systemically investigated antireflection and absorption characteristics of thin film crystalline Si (c- Si) incorporating submicrometer scale hole structure depending on geometrical parameters of the hole via simulation for solar cell applications. The solar-weighted reflectance (SWR) and the ultimate efficiency (u) corresponding to variation in geometrical features of the nanohole such as surface diameter, bottom diameter, period, and depth were calculated to evaluate the effective antireflection and absorption capability by considering the intensive solar energy spectrum. The submicrometer hole structures significantly reduced the SWR and enhanced the u compared to flat surface. In particular, the truncated-cone-hole exhibited lower SWR and higher u compared to perfect-cone-hole structure (with zero bottom diameter) and conventional nanohole structure (with a surface diameter equal to bottom diameter). The thin film c-Si with truncated-cone-hole demonstrated the highest u of ~32.37%, which is larger compared to the conventional nanohole structure (~29.98%) and more than double for the flat surface (~14.23%), when the parameters were optimized. This structural design provides a guideline leading to optimal cell efficiency.