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Title:
 
Deposition of Ultra Thin CuInS2 Absorber Layers by ALD for Thin Film Solar Cells
 
Author(s):
 
F. Donsanti, P. Genevée, N. Schneider, M. Jubault, D. Lincot
 
Keywords:
 
Cost Reduction, CuInS2, CVD Based Deposition, CIS, TFSC
 
Topic:
 
Thin Film Solar Cells
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells
Event: 27th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CV.1.38
 
Pages:
 
2324 - 2328
ISBN: 3-936338-28-0
Paper DOI: 10.4229/27thEUPVSEC2012-3CV.1.38
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


CuInS2 (CIS) is a suitable material to be used as absorber in thin film solar cell (TFSC). CIS films were deposited by atomic layer deposition (ALD) from CuCl, InCl3 and H2S at T = 350 - 450°C. As the deposition of films with the appropriate Cu/In atomic ratio could not be achieved by alternating Cu2S and In2S3 growth cycles, a novel method that consists in the deposition of In2S3 on Cu2S layer was developed. Homogeneous CuInS2 films with the typical optical properties of CIS were obtained (direct gap, Eg = 1,50 eV), and used as absorber in solar cell. Complete devices (Mo/CIS/CdS/ZnO/ZnO:Al) were done and achieved moderate efficiency (n = 1,6 - 2,8%) due to low VOC values (VOC = 0,26 - 0,31 V) but relatively good EQE (0,7) and JSC values (JSC = 13,1 - 16,1 mA.cm-2).