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Deposition of Ultra Thin CuInS2 Absorber Layers by ALD for Thin Film Solar Cells
F. Donsanti, P. Genevée, N. Schneider, M. Jubault, D. Lincot
Cost Reduction, CuInS2, CVD Based Deposition, CIS, TFSC
Thin Film Solar Cells
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells
Event: 27th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CV.1.38
2324 - 2328
ISBN: 3-936338-28-0
Paper DOI: 10.4229/27thEUPVSEC2012-3CV.1.38
0,00 EUR
Document(s): paper


CuInS2 (CIS) is a suitable material to be used as absorber in thin film solar cell (TFSC). CIS films were deposited by atomic layer deposition (ALD) from CuCl, InCl3 and H2S at T = 350 - 450°C. As the deposition of films with the appropriate Cu/In atomic ratio could not be achieved by alternating Cu2S and In2S3 growth cycles, a novel method that consists in the deposition of In2S3 on Cu2S layer was developed. Homogeneous CuInS2 films with the typical optical properties of CIS were obtained (direct gap, Eg = 1,50 eV), and used as absorber in solar cell. Complete devices (Mo/CIS/CdS/ZnO/ZnO:Al) were done and achieved moderate efficiency (n = 1,6 - 2,8%) due to low VOC values (VOC = 0,26 - 0,31 V) but relatively good EQE (0,7) and JSC values (JSC = 13,1 - 16,1 mA.cm-2).