Title:	Development of Nano-Structured ‘Cu2-xS’ Film for Photovoltaic Applications
Author(s):	R. Mandal, D. Das, B. Ghosh
Keywords:	II-VI Semiconductors, Nanoparticle, Photovoltaic Properties
Topic:	MATERIAL STUDIES, NEW CONCEPTS, ULTRA-HIGH EFFICIENCY AND SPACE TECHNOLOGY
Subtopic:	New Materials and Concepts for Cells
Event:	28th European Photovoltaic Solar Energy Conference and Exhibition
Session:	1AV.3.2
Pages:	384 - 386
ISBN:	3-936338-33-7
Paper DOI:	10.4229/28thEUPVSEC2013-1AV.3.2
Price:	0,00 EUR
Document(s):	paper, poster

Abstract/Summary:

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The present paper consists of methodologies for the fabrication of nano-structured device grade Cu2-XS films for PV applications. Cu2-XS films were prepared using co-evaporation, stacked elemental layer (SEL) deposition and vacuum evaporation of prefabricated Cu2-XS granules. In co-evaporation both Cu and S sources were energized simultaneously in high vacuum chamber. In SEL method, nano-structured Cu and S layer were deposited simultaneously on the warm substrates and later on the total structure was annealed at elevated temperature for the solid state reaction to form C2-XS layer. The Cu2-XS granules were prefabricated using uniform mixture of Cu and S powerder and subsequent annealing in vacuum ambient. The structural, electrical and optical properties of the films prepared by different methods have been studied for various processing conditions of films. The results indicated that the films obtained by these methods having the indirect band gap in the range of 1.1 to 1.8 eV. Schottky diode was fabricated using Cu as the counter metal partner. Results showed that method is promising one in fabrication of nanostructured Cu2S films for PV applications