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Title:
 
Direct Heterojunction of Polycrystalline InP/Si by Hydride Vapor Phase Epitaxy for Photovoltaic Application
 
Author(s):
 
Y.T. Sun, W. Metaferia, S. Lourdudoss
 
Keywords:
 
Heterojunction, Polycrystalline, Silicon (Si), III-V Semiconductors
 
Topic:
 
MATERIAL STUDIES, NEW CONCEPTS, ULTRA-HIGH EFFICIENCY AND SPACE TECHNOLOGY
Subtopic: New Materials and Concepts for Cells
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1AV.3.32
 
Pages:
 
437 - 440
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-1AV.3.32
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


The direct heterojunction of polycrystalline InP on (001) and (111) silicon substrates was realized by indium assisted heteroepitaxy in a hydride vapor phase epitaxy system. The poly-InP growth under various temperatures and dopant incorporation were investigated. A coherent InP/Si interface and poly-InP growth rate > 20 μm/hour was observed by cross-sectional scanning electron microscopy (SEM). Effective n-type sulfur doping was revealed by stain-etching. The material properties of poly-InP were characterized by powder X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), photoluminescence (PL), and Raman spectroscopy. A preferential crystalline orientation of (111) plane with substrate orientation dependent grain size was observed. Raman spectroscopy characterization at different locations on poly-InP surface reveals residual tensile strain in InP on silicon. High optical quality of poly-InP is revealed by PL measurement.