Title:	Definition of Quantum Yield of Inner Photoeffect in Semiconductor Materials in the Process of PV Cells Fabrication
Author(s):	Y.D. Arbuzov, V.M. Evdokimov, O.V. Shepovalova
Keywords:	Experimental Methods, Spectral Coefficient, Characteristically Wavelength
Topic:	MATERIAL STUDIES, NEW CONCEPTS, ULTRA-HIGH EFFICIENCY AND SPACE TECHNOLOGY
Subtopic:	Fundamental Material Studies
Event:	28th European Photovoltaic Solar Energy Conference and Exhibition
Session:	1AV.1.25
Pages:	229 - 232
ISBN:	3-936338-33-7
Paper DOI:	10.4229/28thEUPVSEC2013-1AV.1.25
Price:	0,00 EUR
Document(s):	paper, poster

Abstract/Summary:

---

A method of measuring the inner photoeffect quantum yield in various semiconductors has been described. The method is based on the invariability of the dependence of charge carriers’ separation on the p-n junction on the wavelength of incoming radiation in a wide range of short wave lengths for the proposed structure. Using the results of spectral response measurement for two wavelength values of which one is chosen in the range where the quantum yield is, for certain, equal to unity calculations are made to define the inner quantum yield for the other wavelength value