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Title:
 
Development and Industrialization of High-Quality Multicrystalline Silicon Cast Ingots and Solar Cells
 
Author(s):
 
Z. Xia, K. Guo, H. Sun, H. Pan, J. Li, R. Liu, H. Cui, R. Sidhu, B. Zhang, G. Xing
 
Keywords:
 
Photoluminescence, Dislocation, High Performance, Multicrystalline Silicon, casting technology, heterogeneous nucleation, LID
 
Topic:
 
WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 29th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CO.3.4
 
Pages:
 
542 - 547
ISBN: 3-936338-34-5
Paper DOI: 10.4229/EUPVSEC20142014-2CO.3.4
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


A unique high-quality casting technology of heterogeneous nucleation has been developed by Hareon Solar. Due to having crystalline grains with characteristics of small, uniform size and vertical shape, mc-Si ingots grown by Hareon’s casting technology have approximately one-tenth the dislocation density of conventional mc-Si ingots, which resulted in more uniform and higher bulk lifetime. More importantly, the new technology is cost-competitive with conventional mc-Si casting, and has been industrialized in Hareon’s production lines. Production data show that bulk improvement on wafer achieves 0.3-0.4% absolute efficiency gain in solar cells, in which Voc, Isc and FF are all improved. Characterization and simulations indicated that all the improvements are from high-quality silicon wafer: Voc and Isc increased due to bulk improvement, while FF enhanced because of depletion region improvement. LID (light induced degradation) has been monitored in production for high-quality mc-Si solar cells, and the data verify LID performance is also slightly better on high-quality cells with 0.9% rel. LID compared to conventional cells with 1.0% rel. LID, which indicates that Hareon’s heterogeneous-nucleation casting technology has great LIDresist and performance.