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Title:
 
Device Simulation of Solid-State Perovskite Solar Cells
 
Author(s):
 
P. Lin, K. Tan, J. Tan, L. Wu, G. Wang, S. Jin, Y. Lin
 
Keywords:
 
Simulation, Thin Film Solar Cell, SCAPS-1D Simulation Program, Perovskite Solar Cell
 
Topic:
 
THIN FILM SOLAR CELLS AND MODULES
Subtopic: Perovskites, Organic PV and Hybrid Devices
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.5.23
 
Pages:
 
1125 - 1129
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-3BV.5.23
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


Perovskite solar cells (PSCs) have drawn much attention recently for their high efficiency and low cost. It is necessary to figure out the operation mechanism and device physics of PSCs. In this essay, Poisson equation and continuity equations for electrons and holes were applied for simulating the typical solid-state PSC. Perovskite material is typical Wannier-type exciton, hence it is possible to use Solar Cell Capacitance Simulator (SCAPS) to perform the simulation. The effects of absorber thickness, the interfaces defect density, and the HTM layer characteristics were investigated. Simulation results indicate that: (1) thicker absorber layer induces a higher Jsc, a slightly lower Voc and fill factor; there is an optimum thickness for PCE; (2) recombination rate is higher at the front interface (TiO2/perovskite) than the back interface (perovskite/HTM) therefore the front interface has greater impact on cell performance, and the property improvement of the front interface can accelerate device performance. (3) hole mobility and acceptor density of HTM layers both have strong positive influences which gives a support to search the appropriate substitute materials such as CuI, PTAA and MEH-PPV.