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Title:
 
Development of Transparent Conductive Oxide for Silicon Heterojunction Solar Cell
 
Author(s):
 
K. Nakamura, K. Muramatsu, T. Nishihara, A. Ogura, Y. Ohshita
 
Keywords:
 
c-Si, Heterojunction, TCO Transparent Conducting Oxides, Silicon (Si) Solar Cells
 
Topic:
 
Silicon Materials and Cells
Subtopic: Heterojunction Solar Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.1.40
 
Pages:
 
527 - 529
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2DV.1.40
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


In this work, we investigated high quality low-cost TCO (Transparent Conductive Oxide) suitable for SHJ (Silicon Heterojunction) solar cell. Lightly doped IWO (W-doped In2O3) is better than heavily doped one. 10% doped IWO has low transparency and high resistivity. In contrast with that, the Jsc of the SHJ cell using 1% doped IWO is extremely improved than ITO reference, and the cell efficiency was also improved 1%abs higher than ITO one on average. Sputtered SCOT also revealed its high potential to improve Jsc, significantly. In the both case of lightly doped IWO and SCOT, Jsc is increased by the improvement of infrared response. This is thought to be due to the suppression of free carrier absorption.