Title:	Development of Industrial n-Type Bifacial TOPCon Solar Cells and Modules
Author(s):	W. Wu, J. Bao, L. Ma, C. Chen, R. Liu, Z. Qiao, J. Chen, Z. Liu
Keywords:	LPCVD, Bifacial Solar Cells, Poly Si, Ion Implantation, Passivated Contact
Topic:	Silicon Materials and Cells
Subtopic:	Manufacturing & Production of Si Cells
Event:	36th European Photovoltaic Solar Energy Conference and Exhibition
Session:	2BP.1.5
Pages:	100 - 102
ISBN:	3-936338-60-4
Paper DOI:	10.4229/EUPVSEC20192019-2BP.1.5
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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Jolywood n-type bifacial silicon solar cells using the cost-effective process with phosphorus-ionimplantation and low-pressure chemical vapor deposition (LPCVD) with in-situ oxidation is presented here, which increases the efficiency by 1.02% compared with the bifacial passivated emitter and rear totally diffused (n-PERT) solar cells in Jolywood. The application of ion implantation tunnel oxide passivating contacts (TOPCon) solar cells in mass production using screen-printing achieves an efficiency about 22.55% largely attributed by the improvement of the VOC from 660 mV to 688 mV. With the optimized fabrication processes, average efficiency up to 23.04% with an excellent VOC of 701 mV is obtained. The highest efficiency of 23.15% is achieved with JSC of 40.53 mA/cm2, VOC of 703 mV and FF of 81.25%. Based on the power loss analysis, the performance is mainly limited by the emitter recombination and series resistance, the efficiency of industrial TOPCon solar cell could be improved over 25.4%. The n-type bifacial TOPCon modules of 331 W (60 cells) and 392 W (72 cells) in production line have the average bifaciality of 85% and low temperature coefficient of -0.32%/K.