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Determination of the Back Contact Recombination Velocity of a Cu(In,Ga)Se2/ITO Interface Using Bifacial Solar Cells
T. Schneider, T. Hölscher, H. Kempa, R. Scheer
CIGS, Bifacial Solar Cells, Back Contact Recombination Velocity
Perovskites and Other Non-Silicon Materials, MJs and Tandems
Subtopic: CI(G)S, CdTe and Related Thin Films
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CO.7.6
621 - 626
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-3CO.7.6
0,00 EUR
Document(s): paper


Bifacial CIGSe solar cells with ITO back contacts and with absorber thicknesses ranging from 300 to 1020 nm were studied by measuring J-V-characteristics and EQE with illumination from front and rear side, respectively. Compared to simultaneously processed samples with Mo back contacts, increased open circuit voltages occured with ITO back contacts. This effect was more pronounced with decreasing absorber thickness and can be related to a possible hole extraction barrier. Systematic electrical simulations were employed to determine the back contact recombination velocity at the CIGSe/ITO interface, resulting in a value of the order of 105 cm/s.