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Doping and Hydrogenation Processes for Passivating Contact Solar Cells Using Plasma Immersion Ion Implantation (PIII)
T. Desrues, C. Oliveau, C. Seron, G. Borvon, F. Torregrosa, Q. Rafhay, A. Kaminski, S. Dubois
Doping, Silicon Solar Cell(s), Poly Si, Hydrogenation, Passivated Contact
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2AO.6.5
173 - 175
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2AO.6.5
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Document(s): paper


This study deals with innovative fabrication processes for polysilicon on oxide (poly-Si/SiOx) based passivated contacts solar cells. For such high efficiency devices, the controlled insertion of impurities such as dopants and hydrogen in c-Si and thin active layers is indeed a key challenge. Plasma Immersion Ion Implantation (PIII) technology provides various opportunities for this purpose while offering an economically efficient alternative. We have therefore applied this technique for the simplified fabrication of passivating contacts solar cells featuring poly-Si/SiOx and Transparent Conductive Oxide (TCO) layers on both sides. Using 15nm-thick poly-Si layers doped by PIII technique, large area solar cells (244.2 cm2) with an average efficiency of 21.5% have been fabricated. Moreover, different hydrogenation processes have been tested to further improve the passivating properties of such structures.