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Detecting Multivalent Defect Levels Using Deep Level Transient Spectroscopy
Z. Zhou, M.K. Juhl, F.E. Rougieux
Silicon Materials and Cells
Subtopic: Characterisation & Simulation of Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CO.14.5
ISBN: 3-936338-73-6
0,00 EUR
Document(s): presentation


Standard Deep level transient spectroscopy (DLTS) analysis assumes that defects are monovalent (can only accept one electron or hole). For a multivalent defect (which can accept more than one electron or hole), such an analysis may lead to the extraction of erroneous defect parameters and fails to capture the underlying physics. Here we formulate and validate a model to describe DLTS results based on coupled differential equations which describes the physics of emission and capture at multivalent defects. We validate this model on experimental data and provide insightful analysis of dependent multi-level defects.