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Dynamic HW-CVD Process Development for Very High-Rate Thin-Film Silicon Deposition
S. Leszczynski, B. Leszczynska, C. Strobel, M. Albert, F. Stahr, J.W. Bartha
Manufacturing and Processing, HW-CVD, a-Si:H, High Deposition Rate, Thin Film (TF)
Silicon Materials and Cells
Subtopic: Thin Film and Foil-Based Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.4.26
358 - 362
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2DV.4.26
0,00 EUR
Document(s): paper, poster


The catalytic chemical vapor deposition technology (CAT-CVD), also called Hot-Wire CVD (HW- CVD), is a commonly used technique for the production of various thin-film materials in many branches of the thin- film industry. The focus of this work has been placed on the process development of the hydrogenated amorphous silicon thin-film (a-Si:H) deposition used for fabrication of highly efficient heterojunction solar cells with intrinsic thin layer (HIT). The advantages of the HW-CVD technique are high deposition rates and a lack of plasma damage which is a significant feature in the production of the thin-film layers. The main subject of this work is the development of a high-rate dynamic deposition technique, which enables the realization of a process on large area substrates and in roll- to-roll systems.