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Title:
 
Evaluation of Recovery Methods After Potential Induced Degradation of PV Modules
 
Author(s):
 
P. Lechner, S. Hummel, J. Schnepf
 
Keywords:
 
Degradation, PID, Recovery, c-Si Module
 
Topic:
 
OPERATIONS, PERFORMANCE AND RELIABILITY OF PHOTOVOLTAICS (FROM CELLS TO SYSTEMS)
Subtopic: PV Modules
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 5CO.16.3
 
Pages:
 
1821 - 1824
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-5CO.16.3
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Thermal recovery (TR) and potential-induced recovery (PiR) of PID damaged c-Si modules were studied under laboratory and outdoor field conditions. TR follows quite well a stretched exponential function (SE). The time constant follows an Arrhenius relationship, with Ea of 0.7 eV. Experimental recovery data from the ZSW test field Widderstall could be successfully simulated with the SE-fit. PiR is significantly faster than TR. PiR can be fitted satisfactorily by a compressed exponential function (CE). For PiR module leakage currents it was shown that they behave Arrhenius-like with Ea between 0.9 and 1.0eV. The evolution of PiR can be correlated with the transferred charge for lab- and field-PiR experiments, respectively.