login

Search documents

Browse topics

Document details

 
Title:
 
Effects of the Front Electrode Angle on the Device Performance of In0.16Ga0.84As Solar Cells
 
Author(s):
 
R.-H. Horng, F.-L. Wu, S.-L. Ou, Y.-C. Kao, S.-H. Shi
 
Keywords:
 
Defects, Photoconductivity, Dislocation, InGaAs
 
Topic:
 
SOLAR CELLS / ASSEMBLIES / MODULES FOR TERRESTRIAL CONCENTRATOR SYSTEMS AND FOR SPACE SOLAR GENERATORS
Subtopic: III-V-based Multi-junction Solar Cells, Concentrator Solar Cells and Space Solar Cells
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 4CV.3.2
 
Pages:
 
1411 - 1413
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-4CV.3.2
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


In this study, high-quality In0.16Ga0.84As epitaxial films can be achieved by employing the linear graded buffer layer. The front electrodes with stripe shape were prepared for the cell devices. Additionally, to fabricate the In0.16Ga0.84As solar cell with high efficiency, we prepared the front electrode patterns with various angles from 0° to 90° that defined as the included angles between the electrode and [110] direction of the GaAs wafer. As this included angle was fixed at 45°, the lower conversion efficiency of In0.16Ga0.84As solar cell was measured to be 14.61%. However, when the included angles were varied to 0° and 90°, the higher conversion efficiencies of In0.16Ga0.84As solar cells can be enhanced to 16.34% and 16.58%, respectively. Obviously, with designing the included angles of 0° and 90°, the hole carriers in the devices can be avoided to meet the dislocations in the epilayers efficiently, resulting in the improvement of the conversion efficiency.