Search documents

Browse topics

Document details

Effects of PDT on the Low Temperature Behavior of CIGS Thin-Film Solar Cells
D. Mücke, R. Vidal Lorbada, T. Walter, R. Schäffler
Annealing, Back Contact, Doping, Cu (InGa) Se2
Perovskites and Other Non-Silicon Materials, MJs and Tandems
Subtopic: CI(G)S, CdTe and Related Thin Films
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CO.8.4
633 - 635
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-3CO.8.4
0,00 EUR
Document(s): paper


This paper deals with the behavior of Cu(In,Ga)Se2 based solar cells at low temperatures. Special at tent ion is given to the differences between samples from a standard process and with PDT, especially with respect to the back contact barrier. This barrier in form of a Schot tky junct ion is responsible for a t ransistor-like behavior at low temperatures. The height of this barrier can be calculated from IV(T) curves. With the use of dark annealing experiments it could be shown that metastable changes of the doping in the absorber play an important role for the low temperature behavior. Higher doping leads to a lower amplificat ion factor. Aging t reatments with a negat ive bias causes an increase of the barrier height and lower a decrease of the doping concent ration, leading to a higher amplificat ion factor with a blocking of the forward current even at high temperatures.