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Title:
 
Electronic Properties and Structure of Boron-Hydrogen Complexes in Crystalline Silicon
 
Author(s):
 
J.A.T. De Guzman, V.P. Markevich, J. Coutinho, N.V. Abrosimov, M.P. Halsall, A.R. Peaker
 
Keywords:
 
Defects, Hydrogen, Silicon, Deep Level Transient Spectroscopy, LeTID
 
Topic:
 
Silicon Materials and Cells
Subtopic: Feedstock, Crystallisation, Wafering, Defect Engineering
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DO.10.1
 
Pages:
 
186 - 190
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2DO.10.1
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


The significance of hydrogen in the passivation of doping impurities and recombination active defects in silicon is well-established. It has been suggested recently that complexes of hydrogen with boron can be involved in the so-called "light and elevated temperature-induced degradation" (LeTID) in B-doped Si solar cells but the details of the relevant hydrogen-related reactions are not understood. In this work, the subject of hydrogen-boron interactions in crystalline silicon is revisited. We have carried out ab-initio modelling of the structure, binding energy, and electronic properties of complexes incorporating a boron and one or two hydrogen atoms. Further, the electrically active defects have been studied with the use of junction capacitance techniques in n-type Cz-Si samples co-doped with phosphorus and boron and subjected to hydrogenation by different methods. In DLTS spectra of the hydrogenated Si:P+B crystals subjected to reverse bias annealing at 100 oC, an electron emission signal with an activation energy of ~0.175 eV has been detected. The trap is a donor with electronic properties close to those predicted by ab-initio modelling for borondihydrogen (BH2) complex. It is argued that BH2 can be a very efficient recombination center for minority carriers and may be responsible for LeTID in B-doped p-type Si crystals.