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Effect of Surface Morphology on Passivation Quality of AL2O3/SiNx Stack Layer for PERC Solar Cell
S. Koçak Bütüner, G. Bektaş, G. Kökbudak, M. Zolfaghari Borra, H. Asav, A.E. Keçeci, B. Arıkan, R. Turan
Rear Side Passivation, PERC, Surface Morphology, Chemical Etching
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.1.42
291 - 292
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CV.1.42
0,00 EUR
Document(s): paper


In this study, we analyze the passivation quality of the Al2O3/SiNx stack layer on various surface morphologies for the rear side of PERC solar cells. For this purpose, four types of samples that have different surface morphologies were produced symmetrically. Surface characterization of the samples is conducted by using SEM and AFM. The impact of surface morphology on passivation quality is evaluated by implied open-circuit voltage (iVoc) and minority effective carrier lifetime (Eff) values measured by Sinton WCT – 120 device. Our analysis reveals that the smoother surface improves passivation or (that passivation is enhanced when surface roughness decreases) unless the surface is polished. The highest iVoc and Eff values are obtained for the surface with root mean square roughness (Rq) value of 280 nm as 700.6 mV and 156.47 µs, respectively.