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Title:
 
Fabrication and AMPS-1D Simulation of Silicon-Chalcopyrite Hetero-Junction Solar Cells
 
Author(s):
 
J. Wu, X. Wang, L. Zhang, W. Shen
 
Keywords:
 
c-Si, Chalcopyrite, Heterojunction, Solar Cell
 
Topic:
 
Advanced Photovoltaics : New Concepts and Ultra-High Efficiency
Subtopic: Fundamental Studies
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1CV.3.31
 
Pages:
 
306 - 310
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-1CV.3.31
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Silicon based hetero-junction solar cells have the potential of combining advantages of both crystal silicon and thin film solar cells with the best example HIT solar cells from Sanyo. The chalcopyrite semiconductors, with the compounds composition I(B)-III(A)-VI(A)2, have been reported as the highest light absorption semiconductor and a similar lattice to silicon with the mismatch -0.7% ~0.8%. This document studied the feasibility of silicon wafer based chalcopyrite semiconductor hetero-junction solar cell, and fabricated NPP+ and PNN+ hetero-junction solar cell structures based on p- or n- type wafers. By the means of numerical analysis with AMPS-1D simulation on PNN+ structure, the influence of front contact barrier, chalcopyrite emitter band-gap, acceptor density, carrier mobility and its thickness, wafer thickness, as well as back surface field doping level, were studied. In order to obtain high efficiency, the minimum p-chalcopyrite band-gap and thickness is 1.3eV and 2μm, respectively. The best chalcopyrite acceptor density is 7×1016/cm3, and the carrier mobility should be as large as possible. As for wafer, its minimum thickness is 150μm, with an optimized back surface doping ~1019/cm3. The most important impact to cell performance is a high work function TCO layer to obtain high front contact barrier. If the barrier reaches 1.4eV, 26.6% efficient PNN+ Si-chalcopyrite hetero-junction solar cell is predicted.