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Fabrication and Characterization of ZnO Thin Film Included In2O3 Nanoparticles for Hybrid Quantum Dot Solar Cell
D.U. Lee, S.G. Cho, D. Kim, E.-K. Kim
Subtopic: Fundamental Material Studies
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1AV.1.17
ISBN: 3-936338-33-7
0,00 EUR
Document(s): poster


ZnO has been widely used a transparent window material for solar cells, because the ZnO has a relatively large direct band gap of 3.3 eV at room temperature. To increase photoelectric conversion efficiency of solar cells, it should be required to increase absorption wavelength by using a wide band gap hybrid structure with various kinds of semiconductor nanoparticles (NPs). In this study, the metal-oxide NPs embedded in ZnO layer on Pt/glass substrate were fabricated for a hybrid quantum dot (QD) solar cell. As the bottom electrodes, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The first ZnO layer of 100-nm-thickness was deposited by ultra-high vacuum (UHV) radio frequency sputter at base pressure 1x10-10 Torr. And then, indium thin layer with thickness of 5 nm was coated by using thermal evaporator. The second ZnO layer (100 nm) also was deposited by UHV sputter. Then, the In2O3 NPs were formed by the post-annealing to the sandwich structure with indium film between ZnO layers. Figure 1(a) shows a cross-sectional field emission-transmittance microscopy image of In2O3 NPs embedded in ZnO layer. The In2O3 NPs have a spherical shape with an average diameter of 5 nm and these particles were distributed in the range of 100-nm-thickness in ZnO layer. The crystal fringes of In2O3 NPs in ZnO layer were appeared as shown in Fig. 1(b). Figure 2 shows photoluminescence (PL) spectra with peaks of 380 nm and around 550 nm from the sample of ZnO/In2O3 NPs /ZnO/Pt structure. We will discuss a capability of In2O3 NPs in ZnO layer for the application of tandem QD solar cells.