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Title:
 
Fast CIGS Co-Evaporation Processes by Controlled Rapid Ramping of Thermal Evaporation Sources to Very High Rates
 
Author(s):
 
A. Marienfeld, C. Eisele, H. Schuler
 
Keywords:
 
CIGS, Thermal Evaporation, Co-Evaporation, Physical Vapor Deposition, Effusion Cell
 
Topic:
 
THIN FILM SOLAR CELLS
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.5.17
 
Pages:
 
2275 - 2278
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-3BV.5.17
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Fast CIGSe co-evaporation processes with steep Ga-grading require highly dynamic thermal evaporation sources with deposition rates up to several nm/s. In this work we demonstrate the feasibility of fast ramping rates for copper evaporation from a standard PEZ-W 63-160 effusion cell. This source type is widely used in CIGSe research systems and pilot lines. Originally, the PEZ-W 63-160 was designed for a constant rate operation and very little is known for dynamic operation. Deposition rates up to 120nm/min are demonstrated for a typical substrate distance with ramping times of less than 5min from idle temperature to more than 1400°C. The built-in thermocouple provides a good monitor even to highly dynamic evaporation rates. As a consequence, standard deposition systems can be upgraded for the development of fast processes and the transfer to inline production systems becomes much easier.