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Title:
 
Fabrication of Cu(In,Ga)Se Solar Cells on Stainless Steel Foils with Sol-Gel Barrier Layer
 
Author(s):
 
Y. Kamikawa-Shimizu, N. Yamada, Y. Yamamoto, S. Yamaguchi, H. Shibata, S. Niki
 
Keywords:
 
Polycrystalline, Photovoltaic (PV), CIGS, Flexible Substrate, Thin Film Solar Cell
 
Topic:
 
THIN FILM SOLAR CELLS AND MODULES
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BO.8.3
 
Pages:
 
1057 - 1060
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-3BO.8.3
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


A chalcopyrite Cu(In, Ga)Se2 (CIGS) solar cell was fabricated on a flexible stainless steel (SS) foil substrate with thickness of 0.1 mm. An organically modified silica-based sol-gel barrier layer was introduced to the SS foil to improve the SS surface flatness and block iron diffusion from the substrate into the CIGS absorber. Surface roughness of the substrate was reduced with the sol-gel layer. A remarkable reduction in iron diffusion to below 1015 cm−3 was achieved through the introduction of the sol-gel barrier layer. An alkali silicate thin glass layer was also introduced on the sol gel barrier layer as an alkali metal source. Favorable Na doping of 1019–1020 cm−3 into the CIGS absorber resulted in an improvement in the photovoltaic properties of the absorber. An efficiency of 17.9% was obtained with a short circuit current density of 34 mA/cm2, open circuit voltage of 0.7 V, and fill factor of 0.75.