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Title:
 
Float-Zone Crystal Growth for PV - Where is the Future?
 
Author(s):
 
J. Vedde, T. Clausen, J. Borregaard, P. Kringhøj
 
Keywords:
 
Crystal Growth, Float-Zone, Cost Model, LCOE
 
Topic:
 
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 2CV.3.50
 
Pages:
 
1330 - 1332
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-2CV.3.50
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


By use of the Float-Zone crystal growth method, silicon crystal of higher purity and longer minority carrier lifetime can be manufactured. These properties are beneficial to the solar cells and generate value to the cells, PV modules and installed solar farms. However there are also some extra costs associated with the feedstock needed for the FZ process, and although the crystal growth process by it selves is cheaper and more efficient than the dominating Czochralski crystal growth method, it seems that these overall benefits cannot fully compensate for the extra feedstock expenses, unless the higher quality crystal is valuated in all steps of the downstream value chain. However when all benefits are included in the cost calculations, it is demonstrated that FZ crystal growth can provide power costs in the same level - or even below – the power costs that comes from a CZ based solution.