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Title:
 
Features of Si+ Implanted n-GaSb (100) Photosensitive Structure
 
Author(s):
 
R.V. Ghita, D. Pantelica, C. Logofatu, C.C. Negrila, P. Cristea, L. Fara
 
Keywords:
 
Doping, GaSb, Photoelectric Properties
 
Topic:
 
New Materials and Concepts for Photovoltaic Devices
Subtopic: New Materials and Concepts for Cells and Modules
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 1CV.3.57
 
Pages:
 
124 - 127
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-1CV.3.57
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Gallium antimonide (GaSb) is an III-V semiconducting compound with a distinct lattice and band gap energy structure, enabling innovative application in optoelectronic devices. As substrate material in device technology, it allows operation on a wide spectral range i.e. 0.8÷ 4.3μm. Consequently, GaSb is an important competitor for solar energy conversion e.g. high efficiency thermo-photovoltaic (TPV) cells. Nowadays, GaSb technology is devoted to the development of high quality single crystals, efficient surface passivation techniques or competitive design of active p-n junction. The present work is dedicated to the study of Si+ ion implantation in n-GaSb, with the aim of defining an active p-n junction at a precise level of local doping. The n-GaSb substrates were chemically prepared by cleaning and selective etching, and afterwards were exposed to Si+ at E=1 MeV. The technological procedure included a recovery treatment and for defining the device structure, the metals were vacuum deposited in order to realize ohmic contacts i.e. PdGeAu/n-GaSb and Ag/p-GaSb. The characteristics of the sample in different technological stages were investigated by AFM analysis and selective XPS analysis together with electrical and optical measurements. The result of this experiment was the obtaining of photosensitive structure with a maximum photo-current response at 1.5μm.