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Title:
 
Fabrication of p-Type Na Doped SrCuSeF and n-Type ITO Bilayer Ohmic Tunnel Junction and Its Application to the Back Contact of CdS/CdTe Solar Cells
 
Author(s):
 
T. Wada, K. Miki, D. Tamai, K. Takaya, Y. Shiina, S. Okamoto, T. Okamoto
 
Keywords:
 
Back Contact, CdTe, Tandem, Transparent Conducting Oxides (TCO), TCO, p-Type
 
Topic:
 
Non Silicon-Based Thin Film Photovoltaics
Subtopic: CI(G)S, CdTe and Related Thin Film Solar Cells and Modules
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.2.36
 
Pages:
 
903 - 906
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-3BV.2.36
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


For applications to polycrystalline thin-film tandem-type solar cells, we studied p-type conductive Na doped SrCuSeF and n-type conductive In2O3:Sn (ITO) bilayer films. The Na doped SrCuSeF layers were prepared by pulsed laser deposition (PLD), and the ITO layers were prepared by RF sputtering. The bilayer films showed ohmic current-voltage characteristics. A tunnel junction between these two layers was successfully fabricated, becuse p-type Na doped SrCuSeF and n-type ITO layers had sufficiently high carrier concentrations. The Na doped SrCuSeF/ITO bilayer films were applied to the back electrodes of the CdS/CdTe solar cells. A CdTe solar cell with a back electrode of a 10 nm thick (Sr0.9Na0.1)CuSeF layer and a 200 nm thick ITO layer showed a high conversion efficiency of 14.7% (VOC = 806 mV, JSC = 27.5 mA/cm2, and FF = 0.661). The efficiency was higher than the efficiency of CdTe solar cell with a SrCuSeF single-layer (864 nm) back contact, 11.6%, and that with a SrCuSeF (34nm)/ITO (200nm) bilayer back contact, 14.3%.