Title:	Fabrication of IBC Solar Cells with Efficiency Higher than 24% Using TOPCon Technology
Author(s):	H.C. Chang, C.C. Huang, B.C. Kung, S.Y. Chen, M.T. Kuo, P. Yu, C.J. Huang
Keywords:	Interdigitated Back Contact Solar Cell, Interdigitated Back Passivated Contact Solar Cells, tunnel oxide passivated contact
Topic:	Silicon Materials and Cells
Subtopic:	High Temperature Route for Si Cells
Event:	8th World Conference on Photovoltaic Energy Conversion
Session:	1CV.2.4
Pages:	91 - 94
ISBN:	3-936338-86-8
Paper DOI:	10.4229/WCPEC-82022-1CV.2.4
Price:	0,00 EUR
Document(s):	paper, poster

Abstract/Summary:

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In this article, an interdigitated back passivated contact (IBPC) solar cell, a new type of heterojunction solar cell with a rear side tunnel oxide passivated contact (TOPCon) structure is presented. Numerical simulations of cell structure have been investigated, including the thickness of anti-reflection coating (ARC), the thickness of p+ poly-Si layer, anode finger width and p+-n+ distance. The photovoltaic properties of the prepared solar cell are Voc = 701.6mV, Jsc = 41.5 mA/cm2, FF = 82.53%, and n= 24.03%.