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Growth by Laser Ablation and Characterization of Epitaxial Si-Ge Virtual Substrates on Si
A. Imparato, T. Di Luccio, E. Esposito, C. Minarini, G. Nobile, F. Roca
III-V Semiconductor, Cost Reduction, Concentrator
Material Studies, New Concepts and Ultra-High Efficiency
Subtopic: New Materials, Cells and Modules
Event: 27th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.7.12
285 - 289
ISBN: 3-936338-28-0
Paper DOI: 10.4229/27thEUPVSEC2012-1BV.7.12
0,00 EUR
Document(s): paper


Epitaxial deposition of high-quality GaAs layers on cost effective Si substrates is a quite desirable route to decrease III-V cell cost and guarantee mass production for very high efficiency solar cells for Photovoltaic concentration (CPV). Several techniques have been proposed for the deposition of SiGe virtual substrates. Among them we propose two different methods for the realization of Si-Ge virtual substrates. The first one based on PECVD deposition of graded Si-Ge microcrystalline and amorphous layers having different hydrogen content is nearest to others proposed PECVD approaches. The Si-Ge stacked layers are conditioned by laser crystallization and/or Solid Phase crystallization. The second one is an innovative proposal based on a the utilization of a deposition system developed in our laboratories which can assure simultaneous deposition and X-Y laser beam laser crystallization processing under vacuum. Preliminary results are very interesting showing a high degree of crystallinity of the Si/Ge layers realized layers.