Title:	Graphene Oxide as the Antireflection Etching Mask on Si
Author(s):	L.-C. Chen, C.-T. Yu, Y.-C. Peng, S.-D. Tzeng, C.-M. Wang, C.-C. Lin, C.-H. Lin
Keywords:	c-Si, Graphene Oxide, Antireflection Coating
Topic:	WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic:	Silicon Solar Cell Improvements
Event:	31st European Photovoltaic Solar Energy Conference and Exhibition
Session:	2CV.4.18
Pages:	953 - 955
ISBN:	3-936338-39-6
Paper DOI:	10.4229/EUPVSEC20152015-2CV.4.18
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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Graphene oxide is a common derivative of graphene, and therefore it has the same robust honeycomb plane as graphene. The robust structure can be utilized as an etching mask to texturize the surface of Si in order to develop antireflection application for solar cells. In the past, we have found that graphene-oxide flakes deposited on Si can successfully reduce the reflectance of Si. However, the magnitude of reduction is not satisfied for photovoltaic applications. Therefore, in this study, we further reduce the reflectance via texturizing the surface of Si with graphene oxide as the etching mask. We have tuned the hydrophilic degree of Si surfaces by different treatment time of Si in SC1 (NH4OH:H2O2:H2O solution) solution. Since the oxygen-containing functional groups on graphene oxide are hydrophilic, the distribution of graphene oxide varies accordingly. With the SC1 treatment time of 30 min and subsequent etching, the reflectance can be as low as 2.1 % for red light (667 nm).